semihow rev.a1,march 2013 HTC4A60S t1 t2 g features ? repetitive peak off - state voltage : 600v ? r.m.s on ? state current (i t(rms) = 4a) ? sensitive gate trigger current - 5[ma] of igt at i, ii and iii quadrants. - 12[ma] of igt at iv quadrant. applications heating control, lighting control, motor control such like dimmer, sensor light, humidifier, etc. general description semihow?s sensitive triac product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage . it is generally suitable for power and phase control in ac application . HTC4A60S 4 quadrants sensitive triac v drm = 600 v i t(rms) = 4 a i tsm = 33 a i gt = 5ma/12ma to - 126 symbol absolute maximum ratings (t j =25 unless otherwise specified ) symbol parameter conditions ratings unit v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 v v rrm repetitive peak reverse voltage 600 v i t(av) average on - state current full sine wave, t c = 109.5 o c 3.6 a i t(rms) r.m.s. on - state current 4 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 30/33 a i 2 t fusing current t = 10ms 4.5 a 2 s p gm forward peak g ate power dissipation t j = 125 c 2 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.2 w i fgm forward peak gate current t j = 125 c, pulse width 20us 1 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 6 v t j operating junction temperature - 40~+125 o c t stg storage temperature - 40~+150 o c
semihow rev.a1,march 2013 HTC4A60S thermal characteristics electrical characteristics (t j =25 unless otherwise specified ) notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 5 ma 3+ - - 12 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v 3+ - - 2.0 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 5.6a, i g = 20ma - - 1.6 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 10 - - v/us i h holding current i t = 0.2a - 5 - ma symbol parameter conditions min typ max unit r jc thermal resistance junction to case 3.6 o c /w r ja thermal resistance junction to ambient 80 o c /w
semihow rev.a1,march 2013 HTC4A60S 0 1 2 3 4 5 0 1 2 3 4 5 180 o 150 o 120 o 90 o 60 o 30 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] 0 1 2 3 4 5 100 105 110 115 120 125 130 180 o 150 o 120 o 90 o 60 o 30 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ o c] i + gt3 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.2w) p gm (2w) v gd gate voltage, v g [v] gate current, i g [ma] 10 0 10 1 10 2 0 5 10 15 20 25 30 35 40 50hz surge on state current, i tsm [a] time[cycles] 60hz -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i + gt3 junction temperature, t j [ o c] x 100(%) i gt (t o c) i gt (25 o c) i + gt1 i - gt1 i - gt3 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 v + gt1 v - gt1 v + gt3 v - gt3 junction temperature, t j [ o c] x 100(%) v gt (t o c) v gt (25 o c) typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature
semihow rev.a1,march 2013 HTC4A60S 0 1 2 3 4 5 10 -1 10 0 10 1 10 2 125 o c 25 o c instantaneous on state current, i t [a] instantaneous on state voltage, v t [v] 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 thermal impedance [ o c/w] pulse time [sec] typical characteristics fig 7. instantaneous on state current vs. instantaneous on state voltage fig 8. thermal impedance vs. pulse time r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. r s =0.078 ? v to =0.85v
semihow rev.a1,march 2013 HTC4A60S to - 126 dimensions in millimeters package dimension
semihow rev.a1,march 2013 HTC4A60S to - 126 (forming) dimensions in millimeters package dimension
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